APT20M36BFLLG Microsemi Power Products Group, APT20M36BFLLG Datasheet - Page 3

• Manufacturer Part Number: APT20M36BFLLG
• Description: MOSFET N-CH 200V 65A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT20M36BFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 3080pF @ 25V
• Power - Max: 329W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
140
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
70
60
50
40
30
20
10
0
0
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
Junction
temp. (°C)
25
0
V DS > I D (ON) x R DS (ON)MAX.
V
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
(watts)
V
-25
Power
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
GS
T
= 32.5A
J
50
T
, JUNCTION TEMPERATURE (°C)
= 10V
2
C
, CASE TEMPERATURE (°C)
T J = +125°C
0
T J = +25°C
25
75
4
50
RC MODEL
100
6
0.0329
0.158
0.189
75
100 125 150
T J = -55°C
125
8
150
10
0.00334F
0.00802F
0.165F
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
200
160
120
1.4
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
80
40
0
-50
-50
0
0
V
V GS =15V
DS
V
FIGURE 5, R
GS
-25
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
NORMALIZED TO
T
= 10V @ I
I
5
J
D
T
20
, JUNCTION TEMPERATURE (°C)
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
0
0
10
D
DS
25
25
= 32.5A
40
(ON) vs DRAIN CURRENT
V GS =10V
V GS =20V
15
50
50
10V
60
75
75
20
9V
100 125 150
100 125 150
8V
80
7.5V
25
7V
6.5V
6V
100
30