APT30GP60BDQ1G Microsemi Power Products Group, APT30GP60BDQ1G Datasheet - Page 5

• Manufacturer Part Number: APT30GP60BDQ1G
• Description: IGBT 600V 100A 463W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30GP60BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 100A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT30GP60BDQ1GMP; APT30GP60BDQ1GMP

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1,000
0.30
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
V
50
10
CE
0
1
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
0.0196
0.107
0.144
10
30
-4
40
0.005F
0.0132F
0.135F
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
0es
res
50
SINGLE PULSE
10
-3
300
100
Figure 20, Operating Frequency vs Collector Current
50
10
0
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 5Ω
140
120
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
-2
80
60
40
20
10
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
100
, COLLECTOR TO EMITTER VOLTAGE
20
200
30
Note:
Peak T J = P DM x Z θJC + T C
300
10
Duty Factor D =
40
-1
400
t 1
50
t 2
500
APT30GP60BDQ1(G)
t 1
60
/
t 2
600
F
f
f
P
max1
max2
max
diss
1.0
700
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f