APT30GP60BDQ1G Microsemi Power Products Group, APT30GP60BDQ1G Datasheet - Page 8

• Manufacturer Part Number: APT30GP60BDQ1G
• Description: IGBT 600V 100A 463W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT30GP60BDQ1G

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 30A
• Current - Collector (ic) (max): 100A
• Power - Max: 463W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT30GP60BDQ1GMP; APT30GP60BDQ1GMP

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
700
600
500
400
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Figure 32. Junction Capacitance vs. Reverse Voltage
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
Figure 26. Forward Current vs. Forward Voltage
0
1
0
0
-di
V
T
V
F
J
R
I
F
T
t
200 400 600 800 1000 1200 1400 1600
=125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
RRM
rr
=400V
, ANODE-TO-CATHODE VOLTAGE (V)
30A
J
, JUNCTION TEMPERATURE (°C)
25
V
T
R
T
J
1
, REVERSE VOLTAGE (V)
J
= 125°C
= 175°C
50
10
Q
rr
T
75
2
J
T
= -55°C
J
= 25°C
7.5A
100
3
t
rr
Q
125
rr
15A
100 200
150
4
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
140
120
100
80
60
40
20
25
20
15
10
35
30
25
20
15
10
0
5
0
5
0
25
0
0
-di
-di
F
F
T
/dt, CURRENT RATE OF CHANGE(A/µs)
V
200 400 600 800 1000 1200 1400 1600
200 400 600 800 1000 1200 1400 1600
J
/dt, CURRENT RATE OF CHANGE (A/µs)
R
=125°C
=400V
50
Case Temperature (°C)
75
7.5A
100
30A
30A
15A
15A
125
Duty cycle = 0.5
T
J
150
T
7.5A
V
=175°C
J
R
=125°C
=400V
175