APTGF50H60T3G Microsemi Power Products Group, APTGF50H60T3G Datasheet - Page 3

• Manufacturer Part Number: APTGF50H60T3G
• Description: POWER MODULE IGBT 600V 50A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50H60T3G

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 50A
• Current - Collector (ic) (max): 65A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.2nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF50H60T3GMI; APTGF50H60T3GMI

Temperature sensor NTC
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
SP3 Package outline
Torque
B
V
R
T
R
T
Wt
T
ISOL
25/85
STG
thJC
25
C
J
Resistance @ 25°C
T
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
25
= 298.15 K
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
28
1
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).



B
25
/
85
R

 

25
T
1
25
−
T
1

 




T: Thermistor temperature
R
www.microsemi.com
T
: Thermistor value at T
To heatsink
17
12
Diode
IGBT
M4
APTGF50H60T3G
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
Max
150
125
100
110
0.5
1.2
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 6