APTGF50H60T3G Microsemi Power Products Group, APTGF50H60T3G Datasheet

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... 25°C 230 C ± 25°C 250 125°C 100A @ 500V j www.microsemi.com APTGF50H60T3G V = 600V CES I = 50A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated RBSOA and SCSOA rated ...

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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

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... R : Thermistor value at T     T −     25 IGBT Diode To heatsink 17 12 www.microsemi.com APTGF50H60T3G Min Typ Max Unit 50 kΩ K 3952 Min Typ Max Unit 0.5 °C/W 1.2 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4 ...

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... Ic=100A 3 Ic=100A 2.5 Ic=50A 2 1.5 Ic=50A Ic=25A 1 0.5 Ic=25A -50 DC Collector Current vs Case Temperature 100 125 -50 -25 www.microsemi.com APTGF50H60T3G =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge = 50A V =120V CE = 25°C V =300V CE V =480V 100 125 150 175 200 Gate Charge (nC) 250µ ...

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... V = 400V CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50H60T3G Operating Frequency vs Collector Current 240 ...