POWER MODULE IGBT 600V 50A SP3

APTGF50H60T3G

Manufacturer Part NumberAPTGF50H60T3G
DescriptionPOWER MODULE IGBT 600V 50A SP3
ManufacturerMicrosemi Power Products Group
APTGF50H60T3G datasheet
 

Specifications of APTGF50H60T3G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPTGF50H60T3GMI
APTGF50H60T3GMI
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Download datasheet (294Kb)Embed
Next
Full - Bridge
NPT IGBT Power Module
13 14
Q1
Q3
CR1
CR3
18
19
22
7
23
8
Q2
Q4
CR2
CR4
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
11
Features
10
Non Punch Through (NPT) Fast IGBT
-
-
-
-
4
-
-
3
-
-
32
16
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
19
18
16
Benefits
15
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
14
Solderable terminals both for power and signal
13
for easy PCB mounting
10
11 12
Low profile
Easy paralleling due to positive T
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
Max ratings
600
T
= 25°C
65
C
T
= 80°C
50
C
T
= 25°C
230
C
±20
T
= 25°C
250
C
T
= 125°C
100A @ 500V
j
www.microsemi.com
APTGF50H60T3G
V
= 600V
CES
I
= 50A @ Tc = 80°C
C
®
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
-
Symmetrical design
of V
C
CEsat
Unit
V
A
V
W
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APTGF50H60T3G Summary of contents

  • Page 1

    ... 25°C 230 C ± 25°C 250 125°C 100A @ 500V j www.microsemi.com APTGF50H60T3G V = 600V CES I = 50A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated RBSOA and SCSOA rated ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... R : Thermistor value at T     T −     25 IGBT Diode To heatsink 17 12 www.microsemi.com APTGF50H60T3G Min Typ Max Unit 50 kΩ K 3952 Min Typ Max Unit 0.5 °C/W 1.2 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4 ...

  • Page 4

    ... Ic=100A 3 Ic=100A 2.5 Ic=50A 2 1.5 Ic=50A Ic=25A 1 0.5 Ic=25A -50 DC Collector Current vs Case Temperature 100 125 -50 -25 www.microsemi.com APTGF50H60T3G =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge = 50A V =120V CE = 25°C V =300V CE V =480V 100 125 150 175 200 Gate Charge (nC) 250µ ...

  • Page 5

    ... V = 400V CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50H60T3G Operating Frequency vs Collector Current 240 ...