APTGF50H60T3G Microsemi Power Products Group, APTGF50H60T3G Datasheet

POWER MODULE IGBT 600V 50A SP3

APTGF50H60T3G

Manufacturer Part Number
APTGF50H60T3G
Description
POWER MODULE IGBT 600V 50A SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50H60T3G

Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF50H60T3GMI
APTGF50H60T3GMI
Absolute maximum ratings
RBSOA
Symbol
All multiple inputs and outputs must be shorted together
V
NPT IGBT Power Module
V
I
P
I
CM
CES
C
GE
D
18
19
26
27
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Example: 13/14 ; 29/30 ; 22/23 …
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
15
2
Full - Bridge
Q1
Q2
29
3
25
4
CR2
30
CR1
13 14
22
23
Parameter
23 22
CR4
7
8
CR3
31
7
R1
8
20
Q3
Q4
32
10
19
16
18
11 12
11
10
4
3
16
15
14
13
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
100A @ 500V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
Low profile
Easy paralleling due to positive T
Each leg can be easily paralleled to achieve a
phase leg of twice the current capability
RoHS compliant
600
230
±20
250
65
50
-
-
-
-
-
-
-
-
-
APTGF50H60T3G
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
= 50A @ Tc = 80°C
= 600V
Unit
W
V
A
V
C
of V
®
CEsat
1 - 6

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APTGF50H60T3G Summary of contents

Page 1

... 25°C 230 C ± 25°C 250 125°C 100A @ 500V j www.microsemi.com APTGF50H60T3G V = 600V CES I = 50A @ Tc = 80°C C ® Low voltage drop Low tail current Switching frequency kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated RBSOA and SCSOA rated ...

Page 2

... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF50H60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

Page 3

... R : Thermistor value at T     T −     25 IGBT Diode To heatsink 17 12 www.microsemi.com APTGF50H60T3G Min Typ Max Unit 50 kΩ K 3952 Min Typ Max Unit 0.5 °C/W 1.2 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4 ...

Page 4

... Ic=100A 3 Ic=100A 2.5 Ic=50A 2 1.5 Ic=50A Ic=25A 1 0.5 Ic=25A -50 DC Collector Current vs Case Temperature 100 125 -50 -25 www.microsemi.com APTGF50H60T3G =10V =-55° =25° =125° Collector to Emitter Voltage (V) CE Gate Charge = 50A V =120V CE = 25°C V =300V CE V =480V 100 125 150 175 200 Gate Charge (nC) 250µ ...

Page 5

... V = 400V CE 2 15V 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) APTGF50H60T3G Turn-Off Delay Time vs Collector Current 200 175 150 125 100 V = 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50H60T3G Operating Frequency vs Collector Current 240 ...

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