APTGL60DDA120T3G

Manufacturer Part NumberAPTGL60DDA120T3G
DescriptionIGBT4 MODULE TRENCH 1200V SP3
ManufacturerMicrosemi Power Products Group
APTGL60DDA120T3G datasheets

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Specifications of APTGL60DDA120T3G

Igbt TypeTrench and Field StopConfigurationDual Boost Chopper
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic2.25V @ 15V, 50A
Current - Collector (ic) (max)80ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.77nF @ 25VPower - Max280W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Dual Boost chopper
Trench + Field Stop IGBT4
Power module
13
14
CR1
22
7
23
8
Q1
26
27
29
30
31
15
R1
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGL60DDA120T3G
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR2
Features
Trench + Field Stop IGBT 4 Technology
Q2
4
3
Kelvin emitter for easy drive
32
Very low stray inductance
16
High level of integration
Internal thermistor for temperature monitoring
Benefits
19
18
Outstanding
16
operation
15
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
14
Low profile
13
Easy paralleling due to positive TC of VCEsat
10
11 12
Each leg can be easily paralleled to achieve a
single boost of twice the current capability
RoHS compliant
T
C
T
C
T
C
T
C
T
j
www.microsemi.com
V
= 1200V
CES
I
= 60A @ Tc = 80°C
C
-
Low voltage drop
-
Low leakage current
-
Low switching losses
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
-
Symmetrical design
performance
at
high
Max ratings
Unit
1200
V
= 25°C
80
A
= 80°C
60
= 25°C
100
±20
V
= 25°C
280
W
= 150°C
100A @ 1100V
frequency
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APTGL60DDA120T3G Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGL60DDA120T3G Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGL60DDA120T3G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 50A T = 150°C C ...

  • Page 3

    ... 298.15 K 25/85 25 ∆B ⎡ exp ⎢ B ⎣ (dimensions in mm) SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGL60DDA120T3G Diode To heatsink T =100° Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ...

  • Page 4

    ... Switching Energy Losses vs Gate Resistance 12 10 Eon 8 6 Eoff Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGL60DDA120T3G =15V) GE 100 =150° ( =25° ...

  • Page 5

    ... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGL60DDA120T3G 140 V ...