APTGL60DDA120T3G Microsemi Power Products Group, APTGL60DDA120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGL60DDA120T3G
• Description: IGBT4 MODULE TRENCH 1200V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL60DDA120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Dual Boost Chopper
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.25V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.77nF @ 25V
• Power - Max: 280W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
125
100
75
50
25
0.8
0.6
0.4
0.2
0
0.00001
Operating Frequency vs Collector Current
10
1
0
switching
Hard
0.9
0.7
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
0.3
0.1
0.05
ZCS
30
40
0.0001
I
C
50
(A)
ZVS
60
V
D=50%
R
T
Tc=75°C
CE
J
G
70
=150°C
=8.2 Ω
=600V
Rectangular Pulse Duration in Seconds
0.001
80
Single Pulse
90
www.microsemi.com
0.01
APTGL60DDA120T3G
140
120
100
80
60
40
20
0
0
Forward Characteristic of diode
0.1
V
0.5
F
, Anode to Cathode Voltage (V)
1
1.5
T
J
=125°C
1
2
DIODE
2.5
T
J
=25°C
3
10
3.5
5 - 5