IGBT ARRAY 600V 65A 250W SP3

APTGF50TL60T3G

Manufacturer Part NumberAPTGF50TL60T3G
DescriptionIGBT ARRAY 600V 65A 250W SP3
ManufacturerMicrosemi Power Products Group
APTGF50TL60T3G datasheet
 

Specifications of APTGF50TL60T3G

Igbt TypeNPTConfigurationThree Level Inverter
Voltage - Collector Emitter Breakdown (max)600VVce(on) (max) @ Vge, Ic2.45V @ 15V, 50A
Current - Collector (ic) (max)65ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce2.2nF @ 25VPower - Max250W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP3
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesAPTGF50TL60T3GMP
APTGF50TL60T3GMP
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (239Kb)Embed
Next
Three level inverter
NPT IGBT Power Module
28 27 26
25
23 22
20
29
30
31
32
2
3
4
7
8
All multiple inputs and outputs must be shorted together
Example: 10/11/12 ; 7/8 …
Q1 to Q4 Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
APTGF50TL60T3G
V
I
Application
Solar converter
Uninterruptible Power Supplies
Features
Non Punch Through (NPT) Fast IGBT
-
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Benefits
19
18
Stable temperature behavior
16
Very rugged
15
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
14
RoHS Compliant
13
10
11 12
T
= 25°C
C
T
= 80°C
C
T
= 25°C
C
T
= 25°C
C
T
= 125°C
j
www.microsemi.com
= 600V
CES
= 50A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Max ratings
Unit
600
V
65
A
50
230
±20
V
250
W
100A @ 500V
1 - 8

APTGF50TL60T3G Summary of contents

  • Page 1

    ... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50TL60T3G V I Application • Solar converter • Uninterruptible Power Supplies Features • ...

  • Page 2

    ... Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGF50TL60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

  • Page 3

    ... Symbol Characteristic V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGF50TL60T3G Test Conditions T = 25° =600V 150° 80° 30A 60A ...

  • Page 4

    ... SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50TL60T3G 17 12 www.microsemi.com ...

  • Page 5

    ... Pulse Test < 0.5% Duty cycle =125° =25° Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF50TL60T3G =15V) GE 100 250µs Pulse Test < 0.5% Duty cycle 75 50 =125° Collector Current vs Case Temperature 70 ...

  • Page 6

    ... V = 400V 15V 2 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50TL60T3G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V 15V, R ...

  • Page 7

    ... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGF50TL60T3G Operating Frequency vs Collector Current 240 200 160 hard switching 120 Collector Current (A) C Single Pulse 0 ...

  • Page 8

    ... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TL60T3G =125°C T =25° ...