APTGF50TL60T3G Microsemi Power Products Group, APTGF50TL60T3G Datasheet

IGBT ARRAY 600V 65A 250W SP3

APTGF50TL60T3G

Manufacturer Part Number
APTGF50TL60T3G
Description
IGBT ARRAY 600V 65A 250W SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF50TL60T3G

Igbt Type
NPT
Configuration
Three Level Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF50TL60T3GMP
APTGF50TL60T3GMP

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF50TL60T3G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Q1 to Q4 Absolute maximum ratings
RBSOA
Symbol
All multiple inputs and outputs must be shorted together
V
V
I
P
I
CM
CES
C
GE
D
NPT IGBT Power Module
29
30
31
32
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
28 27 26
See application note APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Three level inverter
2
Example: 10/11/12 ; 7/8 …
3
25
4
23 22
7
8
Parameter
20
10
19
11 12
18
16
15
14
13
www.microsemi.com
Application
Features
Benefits
T
T
T
T
T
APTGF50TL60T3G
C
C
C
C
Solar converter
Uninterruptible Power Supplies
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
j
-
-
-
-
-
-
-
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 100 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
CES
= 50A @ Tc = 80°C
= 600V
100A @ 500V
Max ratings
±20
600
230
250
65
50
Unit
W
V
A
V
1 - 8

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APTGF50TL60T3G Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF50TL60T3G V I Application • Solar converter • Uninterruptible Power Supplies Features • ...

Page 2

... Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGF50TL60T3G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...

Page 3

... Symbol Characteristic V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGF50TL60T3G Test Conditions T = 25° =600V 150° 80° 30A 60A ...

Page 4

... SP3 Package outline 28 1 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGF50TL60T3G 17 12 www.microsemi.com ...

Page 5

... Pulse Test < 0.5% Duty cycle =125° =25° Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF50TL60T3G =15V) GE 100 250µs Pulse Test < 0.5% Duty cycle 75 50 =125° Collector Current vs Case Temperature 70 ...

Page 6

... V = 400V 15V 2 125°C Eon, 50A J 2 1.5 Eoff, 50A 1 0.5 Eon, 50A Gate Resistance (Ohms) www.microsemi.com APTGF50TL60T3G Turn-Off Delay Time vs Collector Current 175 150 125 100 400V 2.7Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V 15V, R ...

Page 7

... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) APTGF50TL60T3G Operating Frequency vs Collector Current 240 200 160 hard switching 120 Collector Current (A) C Single Pulse 0 ...

Page 8

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF50TL60T3G =125°C T =25° ...

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