APTGF50H120TG Microsemi Power Products Group, APTGF50H120TG Datasheet - Page 3
APTGF50H120TG
Manufacturer Part Number
APTGF50H120TG
Description
IGBT MODULE NPT FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50H120TG.pdf
(6 pages)
Specifications of APTGF50H120TG
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF50H120TGMP
Thermal and package characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
SP4 Package outline
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
Torque
B
V
R
T
R
Wt
T
ISOL
T
STG
25/85
thJC
25
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Resistance @ 25°C
T
25
= 298.15 K
(dimensions in mm)
R
T
=
exp
(see application note APT0406 on www.microsemi.com for more information).
B
25
/
85
R
25
T
1
25
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
−
T
1
www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
To Heatsink
Diode
APTGF50H120TG
IGBT
M5
2500
Min
Min
-40
-40
-40
2.5
3952
Typ
Typ
50
Max
0.65
Max
150
125
100
160
0.4
4.7
°C/W
Unit
Unit
N.m
kΩ
°C
K
V
g
3 - 6