APTGF300A120D3G Microsemi Power Products Group, APTGF300A120D3G Datasheet - Page 4
APTGF300A120D3G
Manufacturer Part Number
APTGF300A120D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF300A120D3G.pdf
(5 pages)
Specifications of APTGF300A120D3G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 300A
Current - Collector (ic) (max)
420A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
19nF @ 25V
Power - Max
2100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTGF300A120D3GMP
Typical Performance Curve
*
600
450
300
150
600
450
300
150
120
100
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
60
40
20
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
Output Characteristics (V
J
CE
GE
0.05
0.5
= 300A
0.3
0.1
0.9
= 125°C
0.7
6
= 600V
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5
7
2
0.0001
8
V
T
V
T
CE
J
GE
=125°C
J
10
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
15
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
5
11
Eon
Err
Single Pulse
20
12
6
www.microsemi.com
IGBT
0.01
750
600
450
300
150
80
60
40
20
600
450
300
150
APTGF300A120D3G
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
J
GE
G
J
= 125°C
=125°C
= 3.3 Ω
=3.3 Ω
0.1
= 125°C
= 600V
= 15V
=15V
300
1
150
Output Characteristics
2
600
I
V
300
C
CE
V
V
(A)
GE
3
CE
(V)
=20V
900
1
(V)
4
450
1200
V
V
Eon
GE
V
Eoff
GE
5
GE
=15V
Err
=9V
=12V
1500
600
10
6
4 - 5