APTGF15A120T1G Microsemi Power Products Group, APTGF15A120T1G Datasheet - Page 4
APTGF15A120T1G
Manufacturer Part Number
APTGF15A120T1G
Description
IGBT MODULE NPT PHASE 1200V SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF15A120T1G.pdf
(6 pages)
Specifications of APTGF15A120T1G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 15A
Current - Collector (ic) (max)
25A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
50
40
30
20
10
50
40
30
20
10
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0
0
9
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
J
25
Breakdown Voltage vs Junction Temp.
V
= 125°C
V
1
CE
2.5
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
50
5
3
T
J
T
12
=25°C
J
=125°C
7.5
4
75
13
5
10
T
14
J
=25°C
GE
T
100
6
J
=15V)
Ic=7.5A
=125°C
Ic=30A
Ic=15A
12.5
15
7
www.microsemi.com
125
15
16
8
12
10
25
20
15
10
18
16
14
12
10
APTGF15A120T1G
8
6
4
2
0
6
5
4
3
2
1
0
5
0
8
6
4
2
0
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
J
V
= 15A
= 25°C
CE
0.5
Output Characteristics (V
, Collector to Emitter Voltage (V)
20
T
50
J
, Junction Temperature (°C)
T
50
C
, Case Temperature (°C)
1
Gate Charge (nC)
40
Gate Charge
75
1.5
V
CE
75
=600V
60
T
2
100
J
250µs Pulse Test
< 0.5% Duty cycle
V
=25°C
GE
V
CE
80
= 15V
=240V
2.5
GE
100
=10V)
T
V
J
Ic=7.5A
125
=125°C
CE
Ic=30A
Ic=15A
100
=960V
3
3.5
125
120
150
4 – 6