APTGF15A120T1G Microsemi Power Products Group, APTGF15A120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGF15A120T1G
• Description: IGBT MODULE NPT PHASE 1200V SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF15A120T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

160
120
75
70
65
60
55
50
80
40
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
Switching Energy Losses vs Gate Resistance
0
0
0
0
V
Turn-On Delay Time vs Collector Current
V
T
V
R
V
R
Turn-On Energy Loss vs Collector Current
CE
Current Rise Time vs Collector Current
V
R
GE
J
CE
G
CE
G
= 125°C
CE
G
= 33Ω
I
= 33Ω
= 600V
I
I
= 600V
5
= 15V
CE
= 600V
CE
CE
20
= 33Ω
5
5
= 600V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
Gate Resistance (Ohms)
10
10
10
40
15
15
15
60
V
T
GE
20
V
20
20
J
=125°C,
GE
=15V
Eon, 15A
Eoff, 15A
=15V
80
V
T
V
GE
25
25
25
J
GE
=25°C,
= 15V
=15V
100
30
30
30
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120
35
35
35
35
30
25
20
15
10
400
350
300
250
200
5
0
50
45
40
35
30
25
20
APTGF15A120T1G
2.5
1.5
0.5
0
2
1
0
0
0
Turn-Off Energy Loss vs Collector Current
0
Turn-Off Delay Time vs Collector Current
V
R
Current Fall Time vs Collector Current
V
CE
G
Reverse Bias Safe Operating Area
CE
I
I
= 33Ω
CE
CE
V
= 600V
I
5
5
V
CE
, Collector to Emitter Voltage (V)
R
CE
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
GE
5
G
, Collector to Emitter Current (A)
V
= 600V
= 33Ω
T
T
= 15V
400
CE
J
J
= 25°C
10
= 125°C
10
= 600V, V
10
15
15
15
GE
= 15V, R
800
20
20
20
T
J
= 125°C
G
V
T
25
25
T
= 33Ω
25
T
J
V
GE
J
= 25°C
J
=25°C
GE
=125°C
=15V,
=15V,
1200
30
30
30
35
35
35
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