APTGF25A120T1G Microsemi Power Products Group, APTGF25A120T1G Datasheet - Page 6

• Manufacturer Part Number: APTGF25A120T1G
• Description: IGBT MODULE NPT PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF25A120T1G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.65nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
0.00001
100
0
10
Capacitance vs Collector to Emitter Voltage
0
0.05
0.9
0.5
0.3
0.1
0.7
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
Coes
Cres
Cies
www.microsemi.com
Single Pulse
50
0.01
120
100
80
60
40
20
APTGF25A120T1G
0
Operating Frequency vs Collector Current
0
switching
Hard
0.1
I
C
10
, Collector Current (A)
ZCS
ZVS
20
1
V
D = 50%
R
T
T
J
C
CE
G
= 125°C
= 75°C
= 22Ω
30
= 600V
10
40
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