APT60GT60JRDQ3 Microsemi Power Products Group, APT60GT60JRDQ3 Datasheet - Page 4

• Manufacturer Part Number: APT60GT60JRDQ3
• Description: IGBT 600V 105A 379W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT60GT60JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Current - Collector Cutoff (max): 330µA
• Input Capacitance (cies) @ Vce: 3.1nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 15, Switching Energy Losses vs. Gate Resistance
12000
10000
7000
6000
5000
4000
3000
2000
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
6000
4000
2000
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
25
20
15
10
80
60
40
20
5
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
V
T
V
T
R
L = 100µH
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
R
CE
GE
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
J
G
= 125°C
G
= 25°C
= 4.3Ω
= 4.3Ω
= 400V
= 400V
= +15V
= +15V
= 400V
20
=
R
20
20
G
4.3Ω, L
10
, GATE RESISTANCE (OHMS)
,
or 125°C
40
40
40
E
on2,
=
T
E
100
J
off,
20
120A
V
=
60
60
60
GE
µ
60A
25 or 125°C,V
H, V
= 15V
CE
E
80
80
80
off,
30
=
30A
400V
100
100
100
GE
E
off,
E
=
on2,
40
120A
E
15V
on2,
120
120
120
60A
30A
140
140
140
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
4000
3500
3000
2500
2000
1500
1000
7000
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
350
300
250
200
150
100
140
120
100
500
FIGURE 12, Current Fall Time vs Collector Current
50
80
60
40
20
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
E
R
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
G
on2,
G
GE
= 4.3Ω
T
=
= 400V
= +15V
20
=
=
20
20
J
60A
4.3Ω
=15V,T
, JUNCTION TEMPERATURE (°C)
400V
4.3Ω, L
E
25
off,
30A
40
40
40
E
J
on2,
=25°C
E
=
on2,
100
120A
T
50
J
60
60
60
30A
µ
=
H, V
V
125°C, V
T
GE
T
J
J
T
CE
=
=15V,T
J
80
=
80
80
125°C
=
E
=
75
25°C, V
off,
25°C
400V
GE
120A
J
100
100
100
=125°C
=
GE
15V
100
=
120
120
120
E
15V
off,
60A
140
140
140
125