APT60GT60JRDQ3 Microsemi Power Products Group, APT60GT60JRDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT60GT60JRDQ3
• Description: IGBT 600V 105A 379W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT60GT60JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 60A
• Current - Collector (ic) (max): 105A
• Current - Collector Cutoff (max): 330µA
• Input Capacitance (cies) @ Vce: 3.1nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dissipated Power
TYPICAL PERFORMANCE CURVES
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
T
D = 0.9
J
10
(°C)
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.0078
0.136
20
10
-4
0.285
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.151
EXT
30
are the external thermal
4.38
0.0434
40
RECTANGULAR PULSE DURATION (SECONDS)
T
C
C
C
C
10
ies
oes
res
(°C)
SINGLE PULSE
-3
50
10
-2
120
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 4.3Ω
400
350
300
250
200
150
100
= 400V
20
Figure 18,Minimim Switching Safe Operating Area
50
0
°
°
I
C
C
C
0
V
, COLLECTOR CURRENT (A)
30
10
CE
-1
100
, COLLECTOR TO EMITTER VOLTAGE
40
200
50
Note:
Peak T J = P DM x Z θJC + T C
300
60
Duty Factor D =
1.0
400
70
t 1
t 2
80
500
APT60GT60JRDQ3
t 1
90
/
t 2
600
F
f
f
P
max1
max2
max
diss
700
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f