APTGF15H120T1G

Manufacturer Part NumberAPTGF15H120T1G
DescriptionIGBT MODULE NPT FULL BRIDGE SP1
ManufacturerMicrosemi Power Products Group
APTGF15H120T1G datasheet
 


Specifications of APTGF15H120T1G

Igbt TypeNPTConfigurationFull Bridge Inverter
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.7V @ 15V, 15A
Current - Collector (ic) (max)25ACurrent - Collector Cutoff (max)250µA
Input Capacitance (cies) @ Vce1nF @ 25VPower - Max140W
InputStandardNtc ThermistorYes
Mounting TypeChassis MountPackage / CaseSP1
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Full - Bridge
NPT IGBT Power Module
3
4
Q1
CR1
CR3
5
6
1
Q2
CR2
CR4
7
8
NTC
11
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Application
Q3
2
Features
Q4
9
10
12
Benefits
Parameter
www.microsemi.com
APTGF15H120T1G
V
= 1200V
CES
I
= 15A @ Tc = 80°C
C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 50 kHz
-
Soft recovery parallel diodes
-
Low diode VF
-
Low leakage current
-
RBSOA and SCSOA rated
Very low stray inductance
-
Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
Max ratings
1200
T
= 25°C
25
C
T
= 80°C
15
C
T
= 25°C
60
C
±20
T
= 25°C
140
C
T
= 125°C
30A@1150V
j
Unit
V
A
V
W
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APTGF15H120T1G Summary of contents

  • Page 1

    ... Benefits • • • • • • • Parameter www.microsemi.com APTGF15H120T1G V = 1200V CES I = 15A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...

  • Page 2

    ... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF15H120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGF15H120T1G Min Typ Max IGBT 0.9 Diode 2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N.m ...

  • Page 4

    ... Junction Temperature (°C) J =15V =125° =125°C T =25°C J 7.5 10 12.5 15 Ic=30A Ic=15A Ic=7. 100 125 www.microsemi.com APTGF15H120T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 10 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 18 ...

  • Page 5

    ... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 15A 5 4 Eoff, 15A 100 Gate Resistance (Ohms) APTGF15H120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 33Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...

  • Page 6

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF15H120T1G 120 100 ...