APTGF15H120T1G Microsemi Power Products Group, APTGF15H120T1G Datasheet
APTGF15H120T1G
Specifications of APTGF15H120T1G
Related parts for APTGF15H120T1G
APTGF15H120T1G Summary of contents
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... Benefits • • • • • • • Parameter www.microsemi.com APTGF15H120T1G V = 1200V CES I = 15A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...
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... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF15H120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGF15H120T1G Min Typ Max IGBT 0.9 Diode 2 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N.m ...
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... Junction Temperature (°C) J =15V =125° =125°C T =25°C J 7.5 10 12.5 15 Ic=30A Ic=15A Ic=7. 100 125 www.microsemi.com APTGF15H120T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 10 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 18 ...
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... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V 125° Eon, 15A 5 4 Eoff, 15A 100 Gate Resistance (Ohms) APTGF15H120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 33Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF15H120T1G 120 100 ...