APTGF30H60T3G Microsemi Power Products Group, APTGF30H60T3G Datasheet - Page 4
APTGF30H60T3G
Manufacturer Part Number
APTGF30H60T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF30H60T3G.pdf
(6 pages)
Specifications of APTGF30H60T3G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 30A
Current - Collector (ic) (max)
42A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.35nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
100
120
75
50
25
90
60
30
0
8
7
6
5
4
3
2
1
0
0
1.20
1.10
1.00
0.90
0.80
0.70
0
6
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
V
-50
1
CE
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
2
T
8
-25
, Gate to Emitter Voltage (V)
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
J
3
=25°C
0
10
4
T
J
25
=125°C
5
2
T
250µs Pulse Test
< 0.5% Duty cycle
J
= 25°C
12
6
50
T
J
=-55°C
GE
7
T
75
J
=15V)
3
=-55°C
T
T
J
14
=25°C
J
8
=125°C
Ic=60A
Ic=15A
Ic=30A
100 125
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9
10
16
4
100
60
50
40
30
20
10
18
16
14
12
10
3.5
2.5
1.5
0.5
75
50
25
0
8
6
4
2
0
0
4
3
2
1
0
-50
-50
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
Ic=60A
Ic=30A
250µs Pulse Test
< 0.5% Duty cycle
I
T
Ic=15A
V
C
-25
APTGF30H60T3G
J
Output Characteristics (V
CE
= 30A
-25
= 25°C
T
20
, Collector to Emitter Voltage (V)
J
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
0
1
0
40
Gate Charge (nC)
V
25
Gate Charge
CE
T
J
=300V
=25°C
25
50
V
60
2
CE
=120V
250µs Pulse Test
< 0.5% Duty cycle
V
50
GE
75
= 15V
80
GE
75
T
T
100 125 150
J
J
=125°C
=10V)
=-55°C
3
V
CE
100
100
=480V
125
120
4
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