APTGF30TL601G Microsemi Power Products Group, APTGF30TL601G Datasheet
APTGF30TL601G
Specifications of APTGF30TL601G
APTGF30TL601GMI
Related parts for APTGF30TL601G
APTGF30TL601G Summary of contents
Page 1
... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF30TL601G V = 600V CES I = 30A @ Tc = 80°C C Application • Solar converter • ...
Page 2
... Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off I Short Circuit data sc R Junction to Case Thermal Resistance thJC APTGF30TL601G = 25°C unless otherwise specified j Test Conditions T = 25° 600V T = 125° 25°C V =15V ...
Page 3
... Symbol Characteristic V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTGF30TL601G Test Conditions Min 600 T = 25° =600V 150° 80° 15A F ...
Page 4
... SP1 Package outline See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTGF30TL601G www.microsemi.com ...
Page 5
... Transfer Characteristics 80 250µs Pulse Test < 0.5% Duty cycle =125° Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0. Junction Temperature (°C) J APTGF30TL601G =15V) Output Characteristics ( 250µs Pulse Test < 0.5% Duty cycle 37.5 T =125° 12 30A 25° ...
Page 6
... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 1 Eoff, 30A 0.75 Eon, 30A 0 400V 0. 15V 125° Gate Resistance (Ohms) www.microsemi.com APTGF30TL601G Turn-Off Delay Time vs Collector Current 125 100 V =15V =25° 400V 6.8Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
Page 7
... Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 0.0001 0.001 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF30TL601G Operating Frequency vs Collector Current 240 200 160 120 80 40 hard switching Collector Current (A) C Single Pulse 0 ...
Page 8
... J 0 (A) C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2.5 2 0.9 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 0 0.00001 0.0001 APTGF30TL601G 2.0 2.5 Switching Energy Losses vs Gate Resistance 0 0.375 0.25 0.125 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) www ...
Page 9
... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF30TL601G T =25° ...