APTGF30TL601G Microsemi Power Products Group, APTGF30TL601G Datasheet - Page 9

• Manufacturer Part Number: APTGF30TL601G
• Description: POWER MODULE IGBT 600V 30A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30TL601G

• Igbt Type: NPT
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF30TL601GMI; APTGF30TL601GMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR5 & CR6 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.4
1.2
0.8
0.6
0.4
0.2
80
60
40
20
0.75
0.25
0.00001
0
0.5
1
0
0.0
1
0
0
0.1
Energy losses vs Collector Current
0.05
0.9
0.5
0.3
0.7
Forward Characteristic of diode
0.4
20
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.0001
V
F
I
1.2
C
(V)
40
(A)
T
J
=125°C
1.6
V
V
R
T
J
CE
GE
G
= 125°C
= 2.5Ω
60
= 400V
= 15V
T
Rectangular Pulse Duration (Seconds)
0.001
2.0
J
=25°C
2.4
80
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Single Pulse
0.01
0.75
0.25
0.5
Switching Energy Losses vs Gate Resistance
1
0
0
0.1
V
V
I
T
C
J
CE
GE
= 30A
= 125°C
APTGF30TL601G
= 400V
=15V
2
Gate Resistance (ohms)
4
1
6
8
10
10
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