APTGF15H120T3G Microsemi Power Products Group, APTGF15H120T3G Datasheet - Page 4
APTGF15H120T3G
Manufacturer Part Number
APTGF15H120T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF15H120T3G.pdf
(6 pages)
Specifications of APTGF15H120T3G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 15A
Current - Collector (ic) (max)
25A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
9
8
7
6
5
4
3
2
1
0
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
0
9
250µs Pulse Test
< 0.5% Duty cycle
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
J
-50
V
Breakdown Voltage vs Junction Temp.
= 125°C
V
1
CE
2.5
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
-25
T
GE
J
2
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
Transfer Characteristics
11
5
0
T
3
J
=125°C
12
7.5
25
4
13
50
T
5
10
J
=25°C
T
14
J
75
=25°C
GE
T
6
J
=15V)
Ic=7.5A
=125°C
12.5
Ic=30A
Ic=15A
100 125
www.microsemi.com
15
7
15
16
8
16
14
12
10
40
35
30
25
20
15
10
18
16
14
12
10
8
6
4
2
0
6
5
4
3
2
1
0
5
0
8
6
4
2
0
-50
-50
0
0
DC Collector Current vs Case Temperature
APTGF15H120T3G
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
I
T
C
250µs Pulse Test
< 0.5% Duty cycle
V
J
V
GE
= 15A
= 25°C
-25
Output Characteristics (V
0.5
CE
-25
= 15V
, Collector to Emitter Voltage (V)
20
T
J
, Junction Temperature (°C)
T
C
0
, Case Temperature (°C)
1
0
Gate Charge (nC)
40
25
Gate Charge
1.5
25
V
CE
=600V
50
60
50
2
75
V
CE
80
=240V
2.5
GE
75
100 125 150
=10V)
T
T
V
J
J
=25°C
=125°C
CE
Ic=30A
Ic=15A
Ic=7.5A
100
=960V
100
3
3.5
125
120
4 - 6