APTGF50A120T1G Microsemi Power Products Group, APTGF50A120T1G Datasheet - Page 4
APTGF50A120T1G
Manufacturer Part Number
APTGF50A120T1G
Description
IGBT MODULE NPT PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50A120T1G.pdf
(6 pages)
Specifications of APTGF50A120T1G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.45nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
250
200
150
100
160
120
50
80
40
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
25
Breakdown Voltage vs Junction Temp.
250µs Pulse Test
< 0.5% Duty cycle
V
J
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
50
T
J
=125°C
T
12
J
=25°C
8
4
75
13
T
J
=25°C
14
GE
12
100
T
6
J
T
=15V)
=125°C
J
Ic=100A
=25°C
Ic=50A
Ic=25A
15
www.microsemi.com
125
16
16
8
18
16
14
12
10
70
60
50
40
30
20
10
40
30
20
10
0
8
6
4
2
0
6
5
4
3
2
1
0
0
APTGF50A120T1G
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
CE
J
= 50A
Output Characteristics (V
= 25°C
50
, Collector to Emitter Voltage (V)
T
50
J
, Junction Temperature (°C)
T
50
C
1
100
, Case Temperature (°C)
Gate Charge (nC)
Gate Charge
75
150
75
V
T
2
CE
J
=25°C
200
=600V
100
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
V
250
GE
CE
100
T
=10V)
=240V
3
J
125
V
=125°C
Ic=100A
Ic=25A
CE
Ic=50A
300
=960V
125
350
150
4
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