APTGT35H120T3G Microsemi Power Products Group, APTGT35H120T3G Datasheet - Page 4

• Manufacturer Part Number: APTGT35H120T3G
• Description: IGBT MOD TRENCH FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT35H120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
8
7
6
5
4
3
2
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0
0
0.00001
25
0
0
5
V
V
I
T
C
CE
GE
J
= 35A
= 125°C
= 600V
0.9
0.7
0.05
=15V
0.3
0.5
0.1
0.5
Output Characteristics (V
6
Transfert Characteristics
Gate Resistance (ohms)
45
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
0.0001
1.5
V
8
V
T
CE
65
J
GE
=25°C
(V)
T
(V)
J
2
=25°C
9
Eon
2.5
10
85
GE
T
T
J
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
Eoff
0.001
=125°C
11
3
www.microsemi.com
105
3.5
12
Single Pulse
0.01
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0
0
0
0
0
APTGT35H120T3G
V
V
R
T
V
T
R
CE
GE
G
J
GE
J
G
Energy losses vs Collector Current
= 125°C
Reverse Bias Safe Operating Area
10
=125°C
= 27Ω
T
=27Ω
0.1
= 600V
= 15V
=15V
J
= 125°C
400
20
1
Output Characteristics
30
V
GE
=17V
I
V
C
800
V
CE
40
(A)
CE
2
(V)
1
(V)
Eoff
50
V
Eon
1200
GE
60
3
=15V
V
V
GE
GE
=13V
=9V
70
1600
10
80
4
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