APTGV100H60T3G Microsemi Power Products Group, APTGV100H60T3G Datasheet

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... All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGV100H60T3G Trench & Field Stop V = 600V ; I CES ® IGBT Fast NPT IGBT Q2, Q4 600V ...

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... Inductive Switching (150° ±15V 300V Bus I = 100A 3.3Ω ±15V 300V Bus I = 100A 3.3Ω www.microsemi.com APTGV100H60T3G Max ratings 600 T = 25°C 150 * 80°C 100 * 25°C 200 C ± 25°C 340 150°C 200A @ 550V j Min Typ Max 250 T = 25°C 1 ...

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... I = 100A 100A 400V R di/dt =200A/µs Parameter Test Conditions 600V CE V =15V 90A 1mA www.microsemi.com APTGV100H60T3G Min Typ Max 600 T = 25°C 100 125°C 500 80°C 100 1 125°C 1 25°C 160 125°C 220 25°C 290 125°C 1530 j 0 ...

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... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTGV100H60T3G Min Typ Max 4300 470 400 330 290 200 26 25 150 170 125°C 4 125°C 3.5 j 0.3 Min Typ ...

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... V To heatsink 17 12 ® typical performance curves =15V) GE 200 175 150 T =150°C 125 J 100 T =25°C J 1.5 2 2.5 3 (V) CE www.microsemi.com APTGV100H60T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics V =19V T = 150° =13V GE V =15V GE 75 ...

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... Top Fast diode typical performance curves 300 250 200 150 100 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGV100H60T3G Energy losses vs Collector Current 300V 15V 3.3Ω 150° ...

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... V , Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGV100H60T3G =15V) Output Characteristics (V GE 300 250µs Pulse Test 250 < 0.5% Duty cycle T =25°C 200 J 150 100 T =125° Collector to Emitter Voltage (V) ...

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... Eon, 180A 15V Eoff, 180A 125°C J Eoff, 90A 8 Eon, 90A Eoff, 45A 4 Eon, 45A Gate Resistance (Ohms) www.microsemi.com APTGV100H60T3G Turn-Off Delay Time vs Collector Current 250 200 150 100 V = 400V 5Ω 150 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 400V, V ...

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... T =1 25° =25° 0.0 0.5 1.0 1.5 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV100H60T3G Operating Frequency vs Collector Current V = 400V CE ZVS 5Ω 125° 75°C C ZCS Hard switching 100 120 I , Collector Current (A) C 0.1 ...