APTGV100H60T3G Microsemi Power Products Group, APTGV100H60T3G Datasheet - Page 6

• Manufacturer Part Number: APTGV100H60T3G
• Description: IGBT NPT BST CHOP FULL BRDG SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV100H60T3G

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 6.1nF @ 25V
• Power - Max: 340W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.2 Top Fast diode typical performance curves
200
175
150
125
100
8
6
4
2
0
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
0.00001
0
0
0
V
V
I
T
5
C
0.6
0.5
0.4
0.3
0.2
0.1
J
CE
GE
0.00001
= 100A
= 150°C
0
0.9
= 300V
0.7
0.5
=15V
0.3
0.1
0.05
T
5
J
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
=150°C
Transfert Characteristics
Gate Resistance (ohms)
Eon
0.9
0.3
0.7
0.5
0.1
0.05
T
J
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
10
=125°C
0.0001
0.0001
8
V
15
T
GE
J
=25°C
(V)
Eoff
T
9
J
=25°C
20
10
300
250
200
150
100
50
0
0.001
Rectangular Pulse Duration in Seconds
Forw ard Current vs Forw ard Voltage
www.microsemi.com
25
0.001
0.0
Rectangular Pulse Duration (Seconds)
11
V
T
J
F
=1 25°C
, Anode to Cathode Voltage (V)
0.5
Single Pulse
30
12
T
J
=1 75°C
1.0
Single Pulse
0.01
0.01
1.5
T
J
=25°C
2.0
250
200
150
100
7
6
5
4
3
2
1
0
50
0
T
0
J
=-55°C
0
2.5
APTGV100H60T3G
V
V
R
T
0.1
J
CE
GE
G
V
T
R
Energy losses vs Collector Current
= 150°C
Reverse Bias Safe Operating Area
25
= 3.3Ω
GE
J
G
= 300V
= 15V
0.1
=150°C
100
=3.3Ω
=15V
3.0
50
200
75
300 400
I
C
1
100 125 150 175 200
V
(A)
CE
(V)
1
500
Eoff
10
600
Eon
10
700
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