APTGT50A170TG Microsemi Power Products Group, APTGT50A170TG Datasheet - Page 4

• Manufacturer Part Number: APTGT50A170TG
• Description: IGBT MOD TRENCH PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50A170TG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
100
100
50
40
30
20
10
0.45
0.35
0.25
0.15
0.05
80
60
40
20
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.4
0.3
0.2
0.1
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 50A
T
Output Characteristics (V
10
0.5
= 125°C
J
6
= 900V
=125°C
=15V
0.5
0.3
0.05
0.7
0.9
0.1
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
1.5
30
8
0.0001
V
T
V
CE
J
GE
40
=25°C
2
9
(V)
(V)
T
J
2.5
=25°C
50
10
T
GE
60
J
11
3
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
70
12
Eon
Eoff
Er
Single Pulse
www.microsemi.com
80
13
4
IGBT
0.01
125
100
50
40
30
20
10
75
50
25
100
0
0
80
60
40
20
0
0
0
0
APTGT50A170TG
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
=125°C
= 10Ω
=10Ω
0.1
J
= 900V
= 15V
=15V
= 125°C
400
20
1
Output Characteristics
800
40
V
I
2
GE
C
V
(A)
=20V
CE
V
CE
1200
(V)
1
60
(V)
V
3
GE
=15V
1600
V
80
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
100
5
4 - 5