APTGT50A170TG Microsemi Power Products Group, APTGT50A170TG Datasheet - Page 5

• Manufacturer Part Number: APTGT50A170TG
• Description: IGBT MOD TRENCH PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50A170TG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
30
25
20
15
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
5
0
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
0.7
0.5
0.1
0.3
10
hard
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
ZVS
30
0.0001
I
C
(A)
40
50
V
D=50%
R
T
T
60
CE
G
J
C
=125°C
=10 Ω
=75°C
=900V
0.001
rectangular Pulse Duration (Seconds)
70
Single Pulse
www.microsemi.com
80
Diode
0.01
100
90
80
70
60
50
40
30
20
10
0
0
APTGT50A170TG
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
1.5
J
F
=25°C
(V)
1
2
T
J
=125°C
2.5
10
3
5 - 5