APTGF150DA120TG Microsemi Power Products Group, APTGF150DA120TG Datasheet - Page 5

• Manufacturer Part Number: APTGF150DA120TG
• Description: IGBT NPT BOOST CHOP 1200V SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150DA120TG

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.2nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.35
0.25
0.15
0.05
90
80
70
60
50
40
30
20
10
0.3
0.2
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0
switching
0.05
0.9
0.7
0.5
0.1
hard
0.3
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
80
I
C
(A)
ZVS
120
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=5.6 Ω
160
www.microsemi.com
=600V
0.001
rectangular Pulse Duration (Seconds)
Single Pulse
200
Diode
0.01
APTGF150DA120TG
500
400
300
200
100
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
V
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5