APTGT200DU60TG Microsemi Power Products Group, APTGT200DU60TG Datasheet

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APTGT200DU60TG

Manufacturer Part Number
APTGT200DU60TG
Description
IGBT MOD TRENCH DUAL SOURCE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT200DU60TG

Igbt Type
Trench and Field Stop
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 200A
Current - Collector (ic) (max)
290A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
12.3nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
G1
E1
NTC1
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
Dual common source
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
E1
G1
C1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Power Module
C1
Parameter
E
G2
G2
E2
E2
E
C2
Q2
NTC2
NTC1
C2
C2
NTC2
®
G2
E2
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
400A @ 550V
APTGT200DU60TG
Max ratings
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
600
290
200
400
±20
625
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
CES
= 200A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
Technology
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APTGT200DU60TG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT200DU60TG ® Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGT200DU60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 200A T = 150°C ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT200DU60TG R T: Thermistor temperature 25    Thermistor value at T     ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 0.0001 APTGT200DU60TG =15V) GE 400 T J 350 300 250 T =150°C J 200 150 100 2 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT200DU60TG 400 V ...

Page 6

... APTGT200DU60TG www.microsemi.com ...

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