APTGT200DU60TG Microsemi Power Products Group, APTGT200DU60TG Datasheet - Page 5

• Manufacturer Part Number: APTGT200DU60TG
• Description: IGBT MOD TRENCH DUAL SOURCE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200DU60TG

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 200A
• Current - Collector (ic) (max): 290A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 12.3nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.45
0.35
0.25
0.15
0.05
120
100
0.4
0.3
0.2
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
0.05
Hard
50
ZVS
100
0.0001
I
C
(A)
150
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=2Ω
200
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
250
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Diode
0.01
400
350
300
250
200
150
100
APTGT200DU60TG
50
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 6