APTGF200U120DG Microsemi Power Products Group, APTGF200U120DG Datasheet - Page 4

• Manufacturer Part Number: APTGF200U120DG
• Description: IGBT 1200V 275A 1136W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200U120DG

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 275A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 13.8nF @ 25V
• Power - Max: 1136W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1200
1000
800
600
400
200
800
600
400
200
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
9
0
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
-50
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
J
V
250µs Pulse Test
< 0.5% Duty cycle
= 25°C
CE
V
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
-25
T
GE
, Gate to Emitter Voltage (V)
J
, Junction Temperature (°C)
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
4
11
0
T
J
=125°C
12
25
4
8
13
50
T
J
T
=25°C
J
=25°C
14
75
GE
12
T
6
J
=15V)
=125°C
Ic=200A
Ic=400A
www.microsemi.com
Ic=100A
100 125
15
16
16
8
350
300
250
200
150
100
200
150
100
18
16
14
12
10
50
6
5
4
3
2
1
0
50
8
6
4
2
0
0
-50
0
-25
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
250µs Pulse Test
< 0.5% Duty cycle
V
APTGF200U120DG
I
T
GE
C
CE
J
= 200A
-25
Output Characteristics (V
= 25°C
200
= 15V
, Collector to Emitter Voltage (V)
0
T
J
, Junction Temperature (°C)
T
C
1
400
, Case Temperature (°C)
0
25
Gate Charge (nC)
Gate Charge
25
600
50
V
2
CE
50
800 1000 1200 1400
=600V
75
V
CE
T
=240V
J
=25°C
75
100
GE
=10V)
T
3
J
=125°C
V
Ic=400A
Ic=200A
Ic=100A
CE
100
125
=960V
125
150
4
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