APTGF300SK120G

Manufacturer Part NumberAPTGF300SK120G
DescriptionIGBT 1200V 400A 1780W SP6
ManufacturerMicrosemi Power Products Group
APTGF300SK120G datasheet
 

Specifications of APTGF300SK120G

Igbt TypeNPTConfigurationSingle
Voltage - Collector Emitter Breakdown (max)1200VVce(on) (max) @ Vge, Ic3.9V @ 15V, 300A
Current - Collector (ic) (max)400ACurrent - Collector Cutoff (max)500µA
Input Capacitance (cies) @ Vce21nF @ 25VPower - Max1780W
InputStandardNtc ThermistorNo
Mounting TypeChassis MountPackage / CaseSP6
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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Buck chopper
NPT IGBT Power Module
VBUS
Q1
G1
E1
CR2
0/VBUS
G1
VBUS
0/VBUS
E1
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
APTGF300SK120G
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Non Punch Through (NPT) FAST IGBT
-
OUT
-
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
High level of integration
Benefits
Outstanding performance at high frequency
OUT
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS compliant
Max ratings
1200
T
= 25°C
400
c
T
= 80°C
300
c
T
= 25°C
600
c
±20
T
= 25°C
1780
c
T
= 150°C
600A @ 1200V
j
www.microsemi.com
V
= 1200V
CES
I
= 300A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
of V
C
CEsat
Unit
V
A
V
W
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APTGF300SK120G Summary of contents

  • Page 1

    ... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGF300SK120G Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) FAST IGBT ...

  • Page 2

    ... Chopper diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF300SK120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...

  • Page 3

    ... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300SK120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...

  • Page 4

    ... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.07 0.9 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGF300SK120G =15V) GE 600 T J 500 400 300 200 T =125°C J 100 Energy losses vs Collector Current ...

  • Page 5

    ... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300SK120G Forward Characteristic of diode 1000 ...