APTGF300SK120G Microsemi Power Products Group, APTGF300SK120G Datasheet - Page 4

• Manufacturer Part Number: APTGF300SK120G
• Description: IGBT 1200V 400A 1780W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300SK120G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
80
70
60
50
40
30
20
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 150A
0.7
0.1
0.05
0.9
0.3
Output Characteristics (V
= 125°C
0.5
= 600V
=15V
6
4
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
8
2
0.0001
V
8
T
V
J
Eon
T
CE
=125°C
GE
12
J
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
16
=25°C
4
Eoff
10
GE
www.microsemi.com
=15V)
rectangular Pulse Duration (Seconds)
20
0.001
5
11
24
12
6
Single Pulse
0.01
700
600
500
400
300
200
100
600
500
400
300
200
100
80
70
60
50
40
30
20
10
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
APTGF300SK120G
G
GE
J
G
J
= 125°C
=125°C
= 3 Ω
=3 Ω
0.1
= 125°C
= 600V
= 15V
100
=15V
300
1
Output Characteristics
200
2
600
I
C
V
300
(A)
CE
V
V
GE
3
CE
(V)
=20V
900
1
(V)
400
IGBT
4
Eon
1200
V
500
GE
V
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
600
10
6
4 - 5