APTGF300A120G Microsemi Power Products Group, APTGF300A120G Datasheet

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APTGF300A120G

Manufacturer Part Number
APTGF300A120G
Description
IGBT MODULE NPT PHASE LEG SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF300A120G

Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
21nF @ 25V
Power - Max
1780W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Phase leg
NPT IGBT Power Module
VBUS
Q1
G1
E1
Q2
G2
E2
0/VBUS
G1
VBUS
0/VBUS
E1
E2
G2
Absolute maximum ratings
Symbol
Parameter
V
Collector - Emitter Breakdown Voltage
CES
I
Continuous Collector Current
C
I
Pulsed Collector Current
CM
V
Gate – Emitter Voltage
GE
P
Maximum Power Dissipation
D
RBSOA
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
V
I
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
OUT
Non Punch Through (NPT) FAST IGBT
-
-
-
-
-
-
-
-
Kelvin emitter for easy drive
Very low stray inductance
-
-
High level of integration
Benefits
Outstanding performance at high frequency
operation
OUT
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
Max ratings
1200
T
= 25°C
400
c
T
= 80°C
300
c
T
= 25°C
600
c
±20
T
= 25°C
1780
c
T
= 150°C
600A @ 1200V
j
www.microsemi.com
APTGF300A120G
= 1200V
CES
= 300A @ Tc = 80°C
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
Unit
V
A
V
W
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APTGF300A120G Summary of contents

Page 1

... T = 25°C 1780 150°C 600A @ 1200V j www.microsemi.com APTGF300A120G = 1200V CES = 300A @ Tc = 80°C C Low voltage drop Low tail current Switching frequency kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated RBSOA and SCSOA rated ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300A120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...

Page 3

... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300A120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...

Page 4

... Reverse Bias Safe Operating Area 700 600 Eon 500 400 Eoff 300 V GE 200 T =125° 100 Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF300A120G Output Characteristics = 125°C V =15V GE V =20V GE V =12V 600V Eon = 15V = 3 Ω ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300A120G Forward Characteristic of diode 600 ...

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