APTGF300A120G Microsemi Power Products Group, APTGF300A120G Datasheet - Page 4

• Manufacturer Part Number: APTGF300A120G
• Description: IGBT MODULE NPT PHASE LEG SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF300A120G

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 21nF @ 25V
• Power - Max: 1780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
100
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Switching Energy Losses vs Gate Resistance
80
60
40
20
0
0
0.00001
0
0
0
5
0
V
V
I
T
C
0.05
Output Characteristics (V
CE
GE
J
2
0.1
= 300A
0.3
0.9
0.7
0.5
= 125°C
6
= 600V
=15V
1
Gate Resistance (ohms)
Transfert Characteristics
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
6
2
0.0001
8 10 12 14 16 18 20
8
V
T
V
T
CE
J
GE
=125°C
J
3
=25°C
(V)
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
=15V)
www.microsemi.com
rectangular Pulse Duration (Seconds)
0.001
5
11
Eon
Eoff
Er
Single Pulse
12
6
0.01
700
600
500
400
300
200
100
70
60
50
40
30
20
10
600
500
400
300
200
100
0
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
G
J
J
GE
G
J
= 125°C
=125°C
= 3 Ω
=3 Ω
0.1
= 125°C
= 600V
= 15V
100
=15V
300
APTGF300A120G
1
Output Characteristics
200
2
600
Eoff
I
C
V
300
CE
V
V
(A)
GE
3
CE
(V)
=20V
900
1
(V)
400
IGBT
4
1200
Eon
V
500
V
GE
V
GE
5
Eoff
GE
=15V
=9V
Er
=12V
1500
600
10
6
4 - 5