APTGF300A120G Microsemi Power Products Group, APTGF300A120G Datasheet
APTGF300A120G
Specifications of APTGF300A120G
Related parts for APTGF300A120G
APTGF300A120G Summary of contents
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... T = 25°C 1780 150°C 600A @ 1200V j www.microsemi.com APTGF300A120G = 1200V CES = 300A @ Tc = 80°C C Low voltage drop Low tail current Switching frequency kHz Soft recovery parallel diodes Low diode VF Low leakage current Avalanche energy rated RBSOA and SCSOA rated ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr Er Reverse Recovery Energy APTGF300A120G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGF300A120G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.07 °C/W ...
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... Reverse Bias Safe Operating Area 700 600 Eon 500 400 Eoff 300 V GE 200 T =125° 100 Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGF300A120G Output Characteristics = 125°C V =15V GE V =20V GE V =12V 600V Eon = 15V = 3 Ω ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGF300A120G Forward Characteristic of diode 600 ...