MWI50-12A7 IXYS, MWI50-12A7 Datasheet - Page 4

• Manufacturer Part Number: MWI50-12A7
• Description: MOD IGBT SIXPACK RBSOA 1200V E2
• Manufacturer: IXYS

Specifications of MWI50-12A7

• Configuration: Three Phase Inverter
• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 50A
• Current - Collector (ic) (max): 85A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E2
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 85A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 18
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 85
• Ic80, Tc = 80°c, Igbt, (a): 60
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 2.2
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 5.6
• Rthjc, Max, Igbt, (k/w): 0.35
• If25, Tc = 25°c, Diode, (a): 110
• If80, Tc = 80°c, Diode, (a): 70
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
E
E
I
CM
on
on
120
100
24
mJ
18
12
80
60
40
20
20
mJ
15
10
A
6
0
5
0
0
0
0 10 20 30 40 50 60 70 80 90 100
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
t
= 125°C
= 50A
= 600V
200
= ±15V
d(on)
E
on
t
20
r
times versus collector current
times versus gate resistor
RBSOA
400
40
600
R
T
V
J
G
CEK
= 125°C
= 22Ω
< V
60
800 1000 1200
CES
R
I
G
C
80
t
E
d(on)
t
V
V
R
T
V
on
r
J
CE
GE
G
CE
= 125°C
= 22Ω
= 600V
= ±15V
100
V
A
Ω
120
90
60
30
0
240
180
120
60
0
ns
ns
t
t
0.00001
E
Z
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
0.00001 0.0001
mJ
12
mJ
10
10
8
6
4
2
0
8
6
4
2
0
1
0
0 10 20 30 40 50 60 70 80 90 100
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 50A
= 600V
= ±15V
20
single pulse
times versus collector current
times versus gate resistor
40
diode
0.001
60
MWI 50-12 A7
MWI 50-12 A7T
0.01
IGBT
R
G
I
C
80
t
V
V
R
T
0.1
J
CE
GE
G
t
= 125°C
E
= 22Ω
d(off)
= 600V
= ±15V
MWI50-12A7
100
off
t
s
E
t
d(off)
t
f
f
off
A
Ω
1
20070912a
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t