IXFN520N075T2 IXYS, IXFN520N075T2 Datasheet - Page 2

• Manufacturer Part Number: IXFN520N075T2
• Description: MOSFET N-CH 75V 480A SOT227
• Manufacturer: IXYS
• Series: TrenchT2™r
• Type: TrenchT2 GigaMOS HiperFetr

Specifications of IXFN520N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 480A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 545nC @ 10V
• Input Capacitance (ciss) @ Vds: 41000pF @ 25V
• Power - Max: 940W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 36 ns
• Fall Time: 35 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 48 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 480 A
• Output Voltage: 75 V
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 480
• Rds(on), Max, Tj=25°c, (?): 0.0019
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 940
• Rthjc, Max, (k/w): 0.16
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
V
Repetitive, Pulse Width Limited by T
I
I
-di/dt = 100A/μs
V
Test Conditions
Test Conditions
Gate Input Resistance
F
F
DS
GS
GS
GS
GS
R
G
= 100A, V
= 150A, V
= 37.5V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 0V, V
= 10V, V
= 1Ω (External)
= 10V, V
= 0V
DS
D
GS
GS
DS
DS
= 60A, Note 1
= 25V, f = 1MHz
= 0V, Note 1
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 200A
= 260A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
65
Characteristic Values
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
4150
Typ.
1.36
0.05
105
530
545
177
135
357
Typ.
41
48
36
80
35
7
0.16 °C/W
Max.
1600
6,404,065 B1
6,534,343
6,583,505
1.25
Max.
520
150 ns
°C/W
nC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B (IXFN) Outline
IXFN520N075T2
6,727,585
6,771,478 B2 7,071,537
(M4 screws (4x) supplied)
7,005,734 B2
7,063,975 B2
7,157,338B2