IXFN520N075T2 IXYS, IXFN520N075T2 Datasheet - Page 5

• Manufacturer Part Number: IXFN520N075T2
• Description: MOSFET N-CH 75V 480A SOT227
• Manufacturer: IXYS
• Series: TrenchT2™r
• Type: TrenchT2 GigaMOS HiperFetr

Specifications of IXFN520N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 480A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 545nC @ 10V
• Input Capacitance (ciss) @ Vds: 41000pF @ 25V
• Power - Max: 940W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 36 ns
• Fall Time: 35 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 48 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 480 A
• Output Voltage: 75 V
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 480
• Rds(on), Max, Tj=25°c, (?): 0.0019
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 940
• Rthjc, Max, (k/w): 0.16
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
180
160
140
120
100
600
500
400
300
200
100
46
44
42
40
38
36
34
32
80
60
40
20
0
0
40
25
1
R
V
T
V
t
DS
G
Fig. 17. Resistive Turn-off Switching Times
J
r
DS
35
Fig. 15. Resistive Turn-on Switching Times
= 1Ω , V
= 125ºC, V
2
60
= 37.5V
= 37.5V
Fig. 13. Resistive Turn-on Rise Time
45
3
GS
80
t
GS
= 10V
d(on)
= 10V
vs. Junction Temperature
55
vs. Gate Resistance
4
- - - -
vs. Drain Current
100
T
T
J
J
- Degrees Centigrade
I
= 25ºC
D
65
R
5
- Amperes
I
G
D
- Ohms
120
= 200A
75
I
6
D
I
D
= 200A
140
= 100A
t
R
V
f
DS
G
85
= 1Ω, V
7
= 37.5V
160
95
GS
8
t
= 10V
d(off)
I
T
D
105
J
180
= 100A
= 125ºC
- - - -
9
115
200
10
240
200
160
120
80
40
0
180
160
140
120
100
80
60
40
125
600
500
400
300
200
100
180
160
140
120
100
44
42
40
38
36
34
32
30
80
60
40
20
0
0
25
40
1
T
V
R
V
t
f
J
DS
DS
35
G
Fig. 16. Resistive Turn-off Switching Times
Fig. 18. Resistive Turn-off Switching Times
= 125ºC, V
2
= 1Ω , V
60
= 37.5V
= 37.5V
45
Fig. 14. Resistive Turn-on Rise Time
3
GS
GS
t
vs. Junction Temperature
80
d(off)
= 10V
I
55
= 10V
D
vs. Gate Resistance
= 200A, 100A
T
4
- - - -
J
- Degrees Centigrade
vs. Drain Current
65
100
I
R
D
5
G
IXFN520N075T2
= 100A
I
D
- Ohms
75
- Amperes
120
6
T
J
85
= 125ºC
t
R
V
T
f
G
DS
J
140
= 1Ω, V
= 25ºC
7
= 37.5V
95
GS
8
105
160
t
= 10V
d(off)
I
D
= 200A
115
- - - -
9
180
125
10
140
130
120
110
100
90
80
70
600
500
400
300
200
100
0
200