IXFN520N075T2 IXYS, IXFN520N075T2 Datasheet - Page 4

• Manufacturer Part Number: IXFN520N075T2
• Description: MOSFET N-CH 75V 480A SOT227
• Manufacturer: IXYS
• Series: TrenchT2™r
• Type: TrenchT2 GigaMOS HiperFetr

Specifications of IXFN520N075T2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 480A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 545nC @ 10V
• Input Capacitance (ciss) @ Vds: 41000pF @ 25V
• Power - Max: 940W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Product: MOSFET Gate Drivers
• Rise Time: 36 ns
• Fall Time: 35 ns
• Supply Current: 200 A
• Maximum Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 80 ns
• Maximum Turn-on Delay Time: 48 ns
• Minimum Operating Temperature: - 55 C
• Number Of Drivers: Single
• Number Of Outputs: 1
• Output Current: 480 A
• Output Voltage: 75 V
• Vdss, Max, (v): 75
• Id(cont), Tc=25°c, (a): 480
• Rds(on), Max, Tj=25°c, (?): 0.0019
• Ciss, Typ, (pf): 41000
• Qg, Typ, (nc): 545
• Pd, (w): 940
• Rthjc, Max, (k/w): 0.16
• Package Style: SOT227
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100.0
10.0
200
180
160
140
120
100
300
250
200
150
100
1.0
0.1
50
80
60
40
20
0
0
0.3
3.0
0
f
= 1 MHz
0.4
3.5
5
Fig. 9. Forward Voltage Drop of
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
4.5
J
0.6
15
Intrinsic Diode
= 150ºC
V
V
V
GS
SD
DS
5.0
0.7
- Volts
20
- Volts
- Volts
T
J
= 150ºC
- 40ºC
5.5
0.8
25
25ºC
C iss
C oss
C rss
T
J
= 25ºC
6.0
0.9
30
6.5
1.0
35
7.0
1.1
40
10,000
1,000
100
10
200
180
160
140
120
100
1
80
60
40
20
10
0.1
0
9
8
7
6
5
4
3
2
1
0
0
0
T
T
Single Pulse
V
I
I
J
C
D
G
20
DS
= 175ºC
= 25ºC
= 260A
= 10mA
Fig. 12. Forward-Bias Safe Operating Area
= 37.5V
100
40
R
60
DS(on)
Fig. 8. Transconductance
External Lead Limit
200
1
Fig. 10. Gate Charge
80
Limit
Q
G
IXFN520N075T2
V
I
- NanoCoulombs
D
DS
100
- Amperes
- Volts
300
120
T
J
= - 40ºC
140
10
400
25ºC
150ºC
160
180
500
DC
200
25µs
100µs
1ms
10ms
100ms
600
100
220