APT5010JFLL Microsemi Power Products Group, APT5010JFLL Datasheet - Page 2

• Manufacturer Part Number: APT5010JFLL
• Description: MOSFET N-CH 500V 41A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5010JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 378W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
R
R
t
dv
I
C
t
V
C
C
Q
RRM
Q
Q
E
E
I
d(on)
d(off)
E
E
SM
t
Q
I
SD
θJC
θJA
S
oss
rr
t
t
/
iss
rss
on
off
on
off
gs
gd
r
rr
f
dt
g
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
S
S
S
10
= -41A,
= -41A,
= -41A,
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.05
0.9
0.5
0.1
0.7
0.3
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -41A)
SINGLE PULSE
-3
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
dv
device itself.
DD
I
I
D
D
I
I
D
D
/
= 333V, V
dt
= 41A, R
= 41A, R
= 333V V
V
V
= 41A @ 25°C
= 41A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
DS
GS
GS
G
GS
j
j
j
j
j
j
= 0.6Ω
= 300V
= 300V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 10V
= 15V
= 0V
10
j
= +25°C, L = 1.65mH, R
G
G
GS
-2
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
≤
-
I
D
41A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D = t 1 / t
≤ 700A/µs
10
-1
t 1
G
= 25Ω, Peak I
t 2
4360
2.28
6.41
15.7
23.6
TYP
TYP
TYP
895
485
455
755
530
60
95
24
50
11
13
25
3
V
R
2
≤
V
DSS
MAX
MAX
MAX
164
280
600
0.33
APT5010JFLL
1.3
L
41
15
40
= 41A
1.0
T
J
≤ 150
Amps
Amps
UNIT
Volts
V/ns
UNIT
UNIT
°C/W
µC
ns
°
nC
pF
ns
µ
C
J