APT20M20JLL Microsemi Power Products Group, APT20M20JLL Datasheet - Page 3

• Manufacturer Part Number: APT20M20JLL
• Description: MOSFET N-CH 200V 104A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT20M20JLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 52A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 104A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 6850pF @ 25V
• Power - Max: 463W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
200
180
160
140
120
100
110
100
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
90
80
70
60
50
40
30
20
10
0
0
-50
25
0
V
V DS > I D (ON) x R DS(ON) MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
FIGURE 8, R
250 µSEC. PULSE TEST
1
@ <0.5 % DUTY CYCLE
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
T
I
GS
D
J
T
= 52A
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
, CASE TEMPERATURE (°C)
0
RC MODEL
3
DS(ON)
T J = +125°C
25
75
T J = +25°C
T J = -55°C
4
0.0409
0.225
0.00361
50
5
vs. TEMPERATURE
100
6
75
7
100 125 150
125
8
0.0246F
0.406F
0.147.639F
9
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
250
200
150
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
0
-50
-50
0
0
V
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
20
-25
-25
GS
V GS =10V
T
NORMALIZED TO
I
J
D
5
= 10V @ I
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
40
0
0
V GS =15 &10V
10
DS(ON)
D
25
60
25
= 52A
9V
15
80
vs DRAIN CURRENT
50
50
100 120 140 160
7.5V
75
75
20
V GS =20V
7V
100 125 150
100 125 150
6.5
25
6V
5.5V
30