APT40M35JVFR Microsemi Power Products Group, APT40M35JVFR Datasheet

APT40M35JVFR

Manufacturer Part Number

APT40M35JVFR

Description

MOSFET N-CH 400V 93A SOT-227

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT40M35JVFR.pdf (4 pages)

Specifications of APT40M35JVFR

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

35 mOhm @ 46.5A, 10V

Drain To Source Voltage (vdss)

400V

Current - Continuous Drain (id) @ 25° C

93A

Vgs(th) (max) @ Id

4V @ 5mA

Gate Charge (qg) @ Vgs

1065nC @ 10V

Input Capacitance (ciss) @ Vds

20160pF @ 25V

Power - Max

700W

Mounting Type

Chassis Mount

Package / Case

SOT-227, miniBLOC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Faster Switching

• Lower Leakage

• Popular SOT-227 Package

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

APT Website - http://www.advancedpower.com

= V

= 25°C

> I

• Avalanche Energy Rated

•

= 25°C

FAST RECOVERY BODY DIODE

D(on)

, I

= ±30V, V

= 320V, V

= 400V, V

x R

= 5mA)

= 0V, I

FREDFET

DS(on)

= 10V, I

= 250µA)

Max, V

= 0V)

= 0V, T

= 0V)

= 46.5A)

All Ratings: T

= 10V)

= 125°C)

400V

= 25°C unless otherwise specified.

MIN

400

APT40M35JVFR

-55 to 150

93A 0.035Ω Ω Ω Ω Ω

3600

TYP

400

372

±30

±40

700

300

5.6

ISOTOP

0.035

±100

1000

MAX

250

"UL Recognized"

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

Related parts for APT40M35JVFR

APT40M35JVFR Summary of contents

Page 1

... ±30V 0V 5mA APT Website - http://www.advancedpower.com 93A 0.035Ω Ω Ω Ω Ω 400V ® ISOTOP = 25°C unless otherwise specified. C APT40M35JVFR 400 93 372 ±30 ±40 700 5.6 -55 to 150 300 93 50 3600 MIN TYP MAX 400 93 0.035 = 125°C) 1000 ± ...

Page 2

... T = 25° 125° 25° 125° See MIL-STD-750 Method 3471 4 Starting T ≤ 93A RECTANGULAR PULSE DURATION (SECONDS) APT40M35JVFR MIN TYP MAX 16800 20160 2400 3360 1070 1605 710 1065 80 120 340 510 115 14 28 MIN TYP MAX 93 372 1.3 ...

Page 3

V GS =6.5V, 7V, 10V & 15V 160 120 120 160 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 200 -55° +125°C 160 V ...

Page 4

... Package Outline W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) APT40M35JVFR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25°C 0.4 0.6 0.8 1.0 1 ...

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