APT40M35JVFR Microsemi Power Products Group, APT40M35JVFR Datasheet - Page 3

• Manufacturer Part Number: APT40M35JVFR
• Description: MOSFET N-CH 400V 93A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT40M35JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 46.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 93A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 1065nC @ 10V
• Input Capacitance (ciss) @ Vds: 20160pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
200
160
120
200
160
120
100
2.5
2.0
1.5
1.0
0.5
0.0
80
40
80
40
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
0
V
0
V
V DS > I D (ON) x R DS (ON)MAX.
DS
GS
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V
-25
T
V GS =6.5V, 7V, 10V & 15V
GS
J
T
, JUNCTION TEMPERATURE (°C)
40
50
C
= 10V
D
, CASE TEMPERATURE (°C)
T J = +125°C
[Cont.]
2
0
T J = +25°C
25
80
75
T J = +125°C
T J = -55°C
50
4
120
100
75
T J = -55°C
100 125 150
6
160
125
4.5V
5.5V
6V
5V
150
200
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
200
160
120
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
= 10V @ 0.5 I
I
J
NORMALIZED TO
D
, JUNCTION TEMPERATURE (°C)
T
40
, DRAIN CURRENT (AMPERES)
C
1
, CASE TEMPERATURE (°C)
0
0
V GS =15V
V GS =10V
7V
10V
DS
25
25
80
(ON) vs DRAIN CURRENT
2
D
[Cont.]
50
50
120
3
75
75
100 125 150
100 125 150
V GS =20V
160
6.5V
4
4.5V
5.5V
6V
5V
200
5