IPA60R600E6 Infineon Technologies, IPA60R600E6 Datasheet
IPA60R600E6
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IPA60R600E6 Summary of contents
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Metal Oxide Semiconductor Field Effect Transistor 600V CoolMOS™ E6 Power Transistor IPx60R600E6 Rev. 2.0, 2010-04-12 Final ...
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... DS(on),max Q 20.5 g,typ I 19 D,pulse E @ 400V 1.9 oss Body diode 500 Type / Ordering Code Package IPD60R600E6 PG-TO252 IPP60R600E6 PG-TO220 IPA60R600E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 FinalData Sheet *Q and E dson g oss Unit µJ A/µs Marking 6R600E6 2 IPD60R600E6, IPP60R600E6 IPD60R600E6 drain pin 2 ...
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Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximum ratings °C, unless otherwise specified. j Table 2 Maximum ratings Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source ...
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... Thermal characteristics TO-220 (IPP60R600E6) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Table 4 Thermal characteristics TO-220FullPAK (IPA60R600E6) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering only allowed at leads Table 5 Thermal characteristics TO-252 (IPD60R600E6) ...
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Electrical characteristics T Electrical characteristics, at j=25 °C, unless otherwise specified. Table 6 Static characteristics Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Table 7 Dynamic characteristics ...
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Table 8 Gate charge characteristics Parameter Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 9 Reverse diode characteristics Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current FinalData ...
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Electrical characteristics diagrams Table 10 Power dissipation TO-220, TO-252 tot C Table 11 Max. transient thermal impedance TO-220, TO-252 Z =f(tp); parameter: D=t /T (thJC) p FinalData Sheet 600V CoolMOS™ E6 Power Transistor Electrical ...
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Table 12 T Safe operating area =25 °C C TO-220, TO-252 I T =f(V ); =25 °C; D=0; parameter Table 13 T Safe operating area =80 °C C TO-220, TO-252 I =f =80 °C; ...
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Table 14 Typ. output characteristics =25 °C; parameter Table 15 Typ. drain-source on-state resistance R =f =125 °C; parameter: V DS(on FinalData Sheet 600V CoolMOS™ E6 Power ...
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Table 16 Typ. transfer characteristics I =f =20V Table 17 Avalanche energy FinalData Sheet 600V CoolMOS™ E6 Power Transistor Electrical characteristics diagrams ...
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Table 18 Typ. capacitances C=f f=1 MHz DS GS Table 19 Forward characteristics of reverse diode I =f(V ); parameter FinalData Sheet 600V CoolMOS™ E6 Power Transistor Electrical characteristics diagrams Typ. C ...
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Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Table 21 Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit I ...
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Package outlines Figure 1 Outlines TO-220, dimensions in mm/inches FinalData Sheet 600V CoolMOS™ E6 Power Transistor 14 IPx60R600E6 Package outlines Rev. 2.0, 2010-04-12 ...
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Figure 2 Outlines TO-220 FullPAK, dimensions in mm/inches FinalData Sheet 600V CoolMOS™ E6 Power Transistor 15 IPx60R600E6 Package outlines Rev. 2.0, 2010-04-12 ...
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Figure 3 Outlines TO-252, dimensions in mm/inches FinalData Sheet 600V CoolMOS™ E6 Power Transistor 16 IPx60R600E6 Package outlines Rev. 2.0, 2010-04-12 ...
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... Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system ...