IPP60R380E6 Infineon Technologies, IPP60R380E6 Datasheet - Page 2

• Manufacturer Part Number: IPP60R380E6
• Description: MOSFET N-CH 600V 10.6A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R380E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10.6A
• Vgs(th) (max) @ Id: 3.5V @ 320µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 100V
• Power - Max: 83W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.34 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10.6 A
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 380.0 mOhm
• Id(max) @ Tc=25°c: 10.6 A
• Idpuls (max): 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

600V CoolMOS™ E6 Power Transistor
1
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. CoolMOS™ E6 series combines
the experience of the leading SJ MOSFET supplier with high class
innovation. The resulting devices provide all benefits of a fast switching
SJ MOSFET while not sacrificing ease of use. Extremely low switching
and conduction losses make switching applications even more efficient,
more compact, lighter, and cooler.
Features
•
•
•
•
Applications
PFC stages, hard switching PWM stages and resonant switching PWM
stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,
Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
Table 1
1) J-STD20 and JESD22
FinalData Sheet
Parameter
V
R
Q
I
E
Body diode d
Type / Ordering Code
IPP60R380E6
IPA60R380E6
D,pulse
DS
oss
DS(on),max
g,typ
Extremely low losses due to very low FOM R
Very high commutation ruggedness
Easy to use/drive
JEDEC
@
@ 400V
T
j,max
1)
Description
Key Performance Parameters
qualified, Pb-free plating, Halogen free
i
/d
t
Value
650
0.38
32
30
2.8
500
Package
PG-TO220
PG-TO220 FullPAK
Unit
V
nC
A
µJ
A/µs
dson
*Q
g
2
and E
oss
6R380E6
Marking
IPP60R380E6, IPA60R380E6
Related Links
IFX CoolMOS Webpage
IFX Design tools
gate
pin 1
Rev. 2.0, 2010-04-09
drain
pin 2
source
pin 3