BLF7G27L-75P,118 NXP Semiconductors, BLF7G27L-75P,118 Datasheet - Page 6

• Manufacturer Part Number: BLF7G27L-75P,118
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-75P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 9.
Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
(dB)
G
18.0
17.6
17.2
16.8
16.4
16.0
−20
−30
−40
−50
−60
−70
p
0
V
Single carrier W-CDMA power gain and drain
efficiency as function of load power;
typical values
0
V
10 MHz as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
7.4 Single carrier W-CDMA
D
p
10
10
Dq
Dq
= 650 mA; f = 2300 MHz.
= 650 mA; f = 2300 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
20
20
30
30
ACPR
ACPR
All information provided in this document is subject to legal disclaimers.
001aam256
001aam258
P
P
L
L
10M
5M
(W)
(W)
BLF7G27L-75P; BLF7G27LS-75P
40
40
Rev. 2 — 14 July 2010
50
40
30
20
10
0
(%)
η
D
Fig 10. Single carrier W-CDMA power gain and drain
Fig 12. Single carrier W-CDMA ACPR at 5 MHz and at
ACPR
(dBc)
(dB)
G
18.0
17.6
17.2
16.8
16.4
16.0
−20
−30
−40
−50
−60
−70
p
0
0
V
efficiency as function of load power;
typical values
V
10 MHz as function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
G
η
D
p
10
10
Dq
Dq
= 650 mA; f = 2400 MHz.
= 650 mA; f = 2400 MHz.
20
20
Power LDMOS transistor
30
30
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
001aam257
001aam259
P
P
L
L
10M
5M
(W)
(W)
40
40
50
40
30
20
10
0
(%)
η
D
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