BLF7G27L-75P,118 NXP Semiconductors, BLF7G27L-75P,118 Datasheet - Page 7

• Manufacturer Part Number: BLF7G27L-75P,118
• Description: TRANSISTOR PWR LDMOS SOT1121A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-75P,118

• Package / Case: SOT-1121A
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 13. Single carrier W-CDMA peak-to-average power
PAR
8
7
6
5
4
3
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
10
Dq
= 650 mA; f = 2300 MHz.
20
30
All information provided in this document is subject to legal disclaimers.
001aam260
P
L
(W)
BLF7G27L-75P; BLF7G27LS-75P
40
Rev. 2 — 14 July 2010
Fig 14. Single carrier W-CDMA peak-to-average power
PAR
8
7
6
5
4
3
0
V
ratio as a function of load power;
typical values
DS
= 28 V; I
10
Dq
= 650 mA; f = 2400 MHz.
20
Power LDMOS transistor
30
© NXP B.V. 2010. All rights reserved.
001aam261
P
L
(W)
40
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